Infineon Technologies has introduced an RF transistor which it claims will support high speed Wi-Fi systems using the upcoming IEEE 802.11ac standard. The Silicon-Germanium: Carbon (SiGe: C) HBT ...
MUNICH, Germany — Researchers from Infineon Technologies AG have shown how it may be possible to use carbon nanotubes (CNTs) to build power semiconductor devices. Conventional power devices are ...
Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. CoolGaN Transistors G5 with integrated Schottky diode ...
Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology. Complementing the company’s ...
Enphase Energy, Inc. ENPH has recently entered into a multi-year supply agreement with Infineon Technologies AG. Infineon will supply 600 V CoolMOS G7 power transistors that will be used in the ...
Munich, May 12, 2006 – Infineon Technologies AG announced today that the first cell phone chips equipped with its advanced 65-nm CMOS process technology are now available. The components functioned ...
Infineon Technologies AG recently presented at SEMICON India 2025, held at the Yashobhoomi India International Convention and Expo Centre in New Delhi, featuring Executive VP Alexander Gorski ...
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